Charge transfer by direct tunneling in thin-oxide memory transistors

1 May 1977

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 24 (5) , 524-530
https://doi.org/10.1109/t-ed.1977.18772

Abstract

Charge transfer by direct tunneling in thin-oxide MNOS memory transistors is carefully examined and the similarities and dissimilarities between different models is shown. The consequences of different assumptions concerning the tunneling probability, surface states, and trap distributions are investigated, and directions for future work are discussed.

Keywords

MEMORY
CHARGE
TRANSISTORS
TRAP
DIRECT TUNNELING
THIN OXIDE
MNOS
DISSIMILARITIES
CAREFULLY

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