High field activation of micropipes in high resistivity silicon carbide
- 1 May 1996
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 25 (5) , 893-898
- https://doi.org/10.1007/bf02666655
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Semi-insulating 6H–SiC grown by physical vapor transportApplied Physics Letters, 1995
- The influence of the semiconductor and dielectric properties on surface flashover in silicon-dielectric systemsIEEE Transactions on Electron Devices, 1994
- Performance limiting micropipe defects in silicon carbide wafersIEEE Electron Device Letters, 1994
- Prebreakdown and breakdown phenomena in high-field semiconductor-dielectric systemsJournal of Applied Physics, 1993
- High-voltage 6H-SiC p-n junction diodesApplied Physics Letters, 1991