Single 5V EPROM with sub-micron memory transistor and on-chip high voltage generator

1 January 1983

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 570-573
https://doi.org/10.1109/iedm.1983.190570

Abstract

A new EPROM technology has been developed that enables the device to be operated with a single 5V power supply. The key factors for the voltage reduction are: (1) The stacked gate MOS memory transistor has been scaled down to a submicron level (0.8µm channel length). (2) An on-chip high voltage generator has been provided to generate control gate voltage of 12V which requires almost no power consumption for sufficient programming. Both soft-write endurance and memory retention were estimated to be more than 10 years, showing that the single 5V EPROM technology is compatible with high density EPROM.

Keywords

EPROM
POWER GENERATION
VOLTAGE CONTROL
THRESHOLD VOLTAGE
POWER SUPPLIES
NONVOLATILE MEMORY
CHARACTER GENERATION
ENERGY CONSUMPTION
NATIONAL ELECTRIC CODE
ELECTRONS

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