Characterization of the Intensity Distribution in a Single Laser Spot Applied to the Annealing of Ion‐Implanted Silicon

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Abstract
By means of the annealing events of ion‐implanted p‐type silicon in liquid phase epitaxy (implantation dose 2.5 × 1016 As+/cm2) the degree of homogeneity of a bent quartz rod diffuser for single pulses of a Q‐switched Nd‐glass laser (λ = 1.06 μm) is investigated using SEM‐EBIC, TEM and RBS. Starting from discrete distributions of EBIC signal heights in the annealing spot the specific distribution of recrystallized monocrystalline and polycrystalline regions as well as the transition between them are proved by TEM diffraction contrast studies. The perfect recrystallization for a locally optimum laser energy density as well as the rectangular shape of the carrier concentration profile are proved by RBS measurements. At different positions of the measuring point within the annealing area RBS, too, renders it possible to point out local inhomogeneities of the energy density distribution in the case of low‐quality beam diffusers.

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