Effect of deposition process on the thin-film ZnS/p-Si interface
- 6 July 1987
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 51 (1) , 21-23
- https://doi.org/10.1063/1.98892
Abstract
Thin films of ZnS have been deposited on p‐Si by evaporation, radio‐frequency sputtering, and magnetron sputtering to form metal‐insulator‐semiconductor structures. The 1 MHz admittance‐voltage characteristics of each have been compared for a qualitative study of the ZnS/p‐Si interface. It is shown that radio‐frequency sputtering results in Fermi‐level pinning, which is ascribed to the presence of silicon dangling bonds caused by radiation damage. It is argued that this damage is advantageous for ZnS/p‐Si electroluminescent diodes.Keywords
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