Characterization of Ion-Implanted Si Rapidly Annealed with Incoherent Light
- 1 January 1981
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Irradiation of Si wafers for 5 to 10 sec with high intensity tungsten halogen lamps produces complete recovery of the displacement damage resulting from ion implantation. Data for two different thermal cycles are presented, with As and B implant doses ranging from 1013 to 1016 ions cm−2. Sheet resistance measurements combined with Rutherford backscattering indicate full electrical activation of dopants with very little diffusion. Carrier lifetimes measured by a photoconductive method and by diode reverse recovery compare favorably with furnace annealing data, and capacitance transient spectroscopy reveals a low density of defects in the junction depletion region. These results combined with the inherent advantages of low cost and high efficiency make Rapid Thermal Annealing ideally suited for VLSI device fabrication.Keywords
This publication has 7 references indexed in Scilit:
- Laser and Electron Beam Interactions with SolidsMRS Bulletin, 1982
- Rapid isothermal annealing of ion implantation damage using a thermal radiation sourceApplied Physics Letters, 1981
- Activation of arsenic-implanted silicon using an incoherent light sourceApplied Physics Letters, 1981
- Radiation Annealing of Boron-Implanted Silicon with a Halogen LampJapanese Journal of Applied Physics, 1980
- Shallow junctions by high-dose As implants in Si: experiments and modelingJournal of Applied Physics, 1980
- Solid-phase epitaxy of implanted silicon by cw Ar ion laser irradiationApplied Physics Letters, 1978
- Physical and electrical properties of laser-annealed ion-implanted siliconApplied Physics Letters, 1978