Structural and Electronic Characterization of Discharge-Produced Boron Nitride
- 1 April 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (4A) , L216-218
- https://doi.org/10.1143/jjap.22.l216
Abstract
Insulating BN thin-films were prepared at a temperature below 300°C by the rf glow discharge decomposition of a B2H6+NH3+H2 gas mixture. The structure of the deposited films was amorphous and the optical bandgap was determined to be ∼5.0 eV. Utilizing the plasma-deposited BN films, Al/BN/Si MIS structures were fabricated to test the dielectric properties. The static dielectric constant of stoichiometric BN is found to be 6.5, and the breakdown-field strength exceeds 3×106 V/cm.Keywords
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