Low-temperature formation of device-quality SiO2/Si interfaces by a two-step remote plasma-assisted oxidation/deposition process
- 1 July 1992
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 10 (4) , 1844-1851
- https://doi.org/10.1116/1.586210