Structural Properties of Yttria‐Stabilized Zirconia Films Grown on Silicon (001) Using MOCVD
- 1 March 1997
- journal article
- Published by Wiley in Chemical Vapor Deposition
- Vol. 3 (2) , 91-96
- https://doi.org/10.1002/cvde.19970030207
Abstract
Layers of yttria‐stabilized zirconia with different yttria content were prepared using MOCVD. The variation of the crystallographic parameters of the cell, as well as the residual stress of the deposits have been studied by XRD as a function of yttria content. The maximum value of the stress has been correlated with a deformation of the cell, in the cubic domain, due to an intrinsic structural modification of the crystals.Keywords
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