A thin-film gas detector for semiconductor process gases
- 6 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 01631918,p. 662-665
- https://doi.org/10.1109/iedm.1988.32900
Abstract
The authors report an integrated silicon sensor capable of monitoring the purity of semiconductor process gases at or near the point of use. The device utilizes a selectively etched dielectric window, which supports a thin deposited metal film and electrodes for sensing the film conductivity. The planar 1.2-mm*1.2-mm*1- mu m-thick window has a buried diffused-silicon heater. The window has a heating efficiency of about 3 degrees C/mW and a time constant of 10 ms. With an 8.5-nm-thick Pt film, the device has shown sensitivity to O/sub 2/ to CF/sub 4/ but not to CF/sub 4/ alone.Keywords
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