Charge compensation of trapped holes in silver bromide

Publisher Website
Google Scholar
Abstract
The temperature dependence of the hole photoresponse in silver bromide single crystals is measured in the temperature range 200 to 300°K. The bulk lifetime of photoexcited holes is shown to pass through a minimum at temperatures where the drift mobility exhibits a maximum value. The analysis of the experimental results suggests that the lifetime of holes is limited by a neutralization process, presumably by silver ion vacancies, preceded by multiple trapping at a level 0.41 eV above the valence band. The proposed scheme is in accordance with other experimental results concerning the properties of holes in silver bromides.