Ultra low noise and high frequency operation of TEGFETS made by MBE
- 31 March 1985
- journal article
- Published by Elsevier in Physica B+C
- Vol. 129 (1-3) , 376-379
- https://doi.org/10.1016/0378-4363(85)90605-9
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Ultrahigh frequency operation of ion-implanted GaAs metal-semiconductor field-effect transistorsApplied Physics Letters, 1984
- High-speed low-power DCFL using planar two-dimensional electron gas FET technologyElectronics Letters, 1982
- Low noise normally on and normally off two-dimensional electron gas field-effect transistorsApplied Physics Letters, 1982