A Simplified Error Model for Accurate Measurement of High-Frequency Transistor S Parameters
- 1 December 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Instrumentation and Measurement
- Vol. IM-34 (4) , 616-619
- https://doi.org/10.1109/tim.1985.4315420
Abstract
This paper presents a simplified error model for error correction for the measurement of S parameters in high-frequency transistors. The simplification process involves zero order approximation of the transistor parameters S21 and S12, and a one time, rather than successive iteration, approximation of the reflection parameters S11 and S22. The simplified error model can be programmed within the capacity of a medium level handheld programmable calculator.Keywords
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