Hydrogen interaction with semiconductor surfaces
- 3 December 1986
- journal article
- Published by Elsevier in Surface Science
- Vol. 178 (1-3) , 90-100
- https://doi.org/10.1016/0039-6028(86)90284-0
Abstract
No abstract availableKeywords
This publication has 33 references indexed in Scilit:
- Microscopic Mechanism of Hydrogen Passivation of Acceptor Shallow Levels in SiliconPhysical Review Letters, 1985
- Initial stages of oxidation of Si{100}(2 × 1): A combined vibrational (EELS) and electron binding energy (XPS) studySurface Science, 1985
- New Ordered Structure for the H-Saturated Si(100) Surface: The (3×1) PhasePhysical Review Letters, 1985
- Adsorption states and adsorption kinetics of atomic hydrogen on silicon crystal surfacesSurface Science, 1985
- Mono- and dihydride phases on silicon surfaces — a comparative study by EELS and UPSSurface Science, 1984
- Adsorption of H, O, and H2O at Si(100) and Si(111) surfaces in the monolayer range: A combined EELS, LEED, and XPS studyJournal of Vacuum Science & Technology B, 1984
- Coverage- and temperature-dependent vibrational spectra of hydrogen chemisorbed on Si(100)2 × 1Surface Science, 1984
- Chemical shifts of SiH stretching frequencies at Si(100) surfaces pre-exposed to oxygen in the submonolayer rangeSurface Science, 1984
- Adsorption of atomic hydrogen on clean cleaved silicon (111)Surface Science, 1983
- Advances in understanding metal-semiconductor interfaces by surface science techniquesJournal of Physics and Chemistry of Solids, 1983