Determination of the density of states effective mass and the energy minimum of the X7 satellite conduction band in GaAs from the X6→X7 absorption spectrum
- 23 July 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (4) , 395-397
- https://doi.org/10.1063/1.103673
Abstract
A time‐resolved picosecond pump‐infrared‐probe technique was used to measure the X6→X7 absorption spectrum in an intrinsic GaAs crystal. From the long‐wavelength onset of the induced X6→X7 absorption spectrum, the energy gap between the minima of the X6 and X7 bands was directly determined to be 0.345±0.017 eV. By fitting the experimental data, the density of states effective mass for the X7 band was found to be 0.48±0.06m0.Keywords
This publication has 20 references indexed in Scilit:
- The intervalley X6→Γ6, L6 scattering time in GaAs measured by ultrafast pump-probe infrared absorption spectroscopySolid-State Electronics, 1989
- High-field transport in GaAs transistorsApplied Physics Letters, 1989
- Femtosecond intervalley scattering in GaAsApplied Physics Letters, 1988
- Semiconducting and other major properties of gallium arsenideJournal of Applied Physics, 1982
- High-temperature carrier transport in n-type epitaxial GaAsSolid-State Electronics, 1980
- GaAs lower conduction-band minima: Ordering and propertiesPhysical Review B, 1976
- Electrical Properties of the GaAsMinima at Low Electric Fields from a High-Pressure ExperimentPhysical Review B, 1970
- Location of theandMinima in GaAs as Determined by Photoemission StudiesPhysical Review B, 1968
- Electroreflectance in the GaAs-GaP AlloysPhysical Review B, 1966
- Fundamental Reflectivity of GaAs at Low TemperaturePhysical Review Letters, 1962