Dynamical Oscillations of X-Ray Integrated Intensity in Laue Diffraction and Their Temperature Dependences for Si Dislocation Crystals
- 16 August 1982
- journal article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 72 (2) , 463-467
- https://doi.org/10.1002/pssa.2210720204
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Determination of the Atomic Scattering Factors of Germanium by Means of the Pendellösung-Beat Measurement Using White RadiationsJapanese Journal of Applied Physics, 1981
- Measurement of X-rayPendellösungintensity beats in diffracted white radiation from silicon wafersActa Crystallographica Section A, 1980
- Statistical dynamical theory of crystal diffraction. I. General formulationActa Crystallographica Section A, 1980
- Observation of dynamical oscillations for neutron scattering by Ge crystals using the inclination methodSolid State Communications, 1978
- Dynamical contrast of the topographic image of a crystal with continuous X-ray radiation. I. An experimental observation of polychromatic interference fringes and their application for the investigation of the anomalous scattering of X-rays by perfect crystalsActa Crystallographica Section A, 1977
- Variable-path Laue measurements and extinctionActa Crystallographica Section A, 1977
- The electron distribution in silicon - I. ExperimentProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1973
- Absolute Measurement of Structure Factors of Si Single Crystal by Means of X-Ray Pendellösung FringesJournal of the Physics Society Japan, 1965
- OBSERVATIONS OF PENDELLÖSUNG FRINGES AND IMAGES OF DISLOCATIONS BY X-RAY SHADOW MICROGRAPHS OF Si CRYSTALSApplied Physics Letters, 1965
- A study of pendellösung fringes in X-ray diffractionActa Crystallographica, 1959