Practical 2-dimensional bipolar-transistor-analysis algorithm
- 13 December 1973
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 9 (25) , 599-600
- https://doi.org/10.1049/el:19730443
Abstract
Extensions to a 2-dimensional bipolar-transistor-modelling algorithm are described. They enable practical high-frequency silicon devices to be analysed in a time appreciably shorter than previously reported schemes. This allows device properties to be economically explored over a wide range of bias currents and voltages.Keywords
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