A compact double-gate MOSFET model comprising quantum-mechanical and nonstatic effects
- 1 January 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 46 (8) , 1656-1666
- https://doi.org/10.1109/16.777154
Abstract
No abstract availableThis publication has 8 references indexed in Scilit:
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