Precipitates of Phosphorus and of Arsenic in Silicon
Open Access
- 1 January 1966
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 113 (1) , 45-48
- https://doi.org/10.1149/1.2423860
Abstract
Precipitate particles were observed through transmission electron microscopy at different depths in silicon wafers diffused with a very high concentration of phosphorus. The precipitates, believed to be phosphorus complexes, were of various shapes, square, rod‐like, and hexagonal, with no definite orientation in the silicon matrix. Silicon wafers diffused with high concentration of arsenic also showed elongated precipitate structures with no definite orientation.Keywords
This publication has 0 references indexed in Scilit: