DA and AD converters for 25 GS/s and above

1 January 2008

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

No. 10994742,p. 117-118
https://doi.org/10.1109/leosst.2008.4590517

Abstract

This paper reports on the status of the design and expected performance of high speed AD and DA converters in SiGe bipolar technology for future 100 Gbit/s Ethernet systems.

Keywords

SILICON GERMANIUM
FIELD PROGRAMMABLE GATE ARRAYS
PROTOTYPES
SYNCHRONIZATION
INTEGRATED CIRCUITS
CONVERTERS
DATA COMMUNICATION

This publication has 4 references indexed in Scilit:

Challenges in Cell-Based Design of Very-High-Speed Si-Bipolar IC's at 100 Gb/s
2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2007
100G Ethernet A Review of Serial Transport Options
2007 Digest of the IEEE/LEOS Summer Topical Meetings, 2007
5120-km RZ-DPSK transmission over G.652 fiber at 10 Gb/s without optical dispersion compensation
IEEE Photonics Technology Letters, 2006
A 14-bit 100-Msample/s subranging ADC
IEEE Journal of Solid-State Circuits, 2000