Growth of refractory oxide films using solid oxygen sources in a molecular beam epitaxy apparatus

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Abstract
Refractory oxide films of Al2O3, SiO2, MgO, and Al2MgO4 have been grown in a molecular beam epitaxy (MBE) system using As2O3 and Sb2O3 as the oxygen source. On the growth surface, elements such as Al whose oxide is more stable than the group V oxide will reduce the group V oxide and form a refractory oxide. With the growth temperature held above 350 °C the group V oxide is volatile and therefore will not be appreciably incorporated into the film as verified by ESCA measurements. This technique allows for MBE growth of oxides with low background pressures because the group V oxides stick well to the liquid nitrogen cooled cryopanels. Metal–insulator and semiconductor–insulator superlattices are possible by opening and closing the group V oxide cell shutter. The wide variety of oxide films possible with this technique could find applications to microwave, optical, magnetic, and display devices.

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