A study of damage induced in semiconductors and metals during microchanneling measurements
- 1 March 1991
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 54 (1-3) , 204-208
- https://doi.org/10.1016/0168-583x(91)95514-e
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- Semiconductor analysis with a channeled helium microbeamNuclear Instruments and Methods in Physics Research, 1981
- The production and use of a nuclear microprobe of ions at MeV energiesNuclear Instruments and Methods, 1979
- Beam-energy dependence of displacement effects in SiRadiation Effects, 1979
- A bakable UHV, Precision three-axis goniometerNuclear Instruments and Methods, 1978
- Channeling measurements in As-doped SiJournal of Applied Physics, 1972