Absorption saturation in germanium, silicon, and gallium arsenide at 10.6 μm
- 15 October 1972
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 21 (8) , 356-357
- https://doi.org/10.1063/1.1654410
Abstract
The absorption of p‐type Ge, Si, and GaAs at 10.6 μm decreases at high intensities. The saturation intensity of Ge, 10 MW cm−2, is sufficiently low for it to be used for passive mode locking of a TEA laser.Keywords
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