Exciton dynamics in a GaAs quantum well
- 15 July 1991
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 44 (3) , 1395-1398
- https://doi.org/10.1103/physrevb.44.1395
Abstract
Time-resolved luminescence measurements in a 27-nm GaAs quantum well show that the initial temperature of the photocreated exciton distribution is determined by the excess energy of the excitation photon. Light-hole excitons lying in the band gap transfer to heavy-hole exciton states by density-dependent exciton-exciton scattering. For excitation close to the band edge, excitons cool only via LA-phonon emission. The time-resolved luminescence profile is modeled by evaluating the LA-phonon energy-loss rate.Keywords
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