Semi-insulating blocked planar BH GaInAsP/InP laser with high power and high modulation bandwidth

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Abstract
A high-power, high-speed GaInAsP/InP laser operating at a 1.3μm wavelength is described. The laser is obtained with three epitaxial growth steps and has semi-insulating InP blocking layers resulting in low parasitic capacitance. A 3 dB bandwidth of 14.7 GHz together with 38 mW output power has been achieved.