Topographic Imperfections in Zone Melting Recrystallized Si Films on SiO2
- 1 July 1984
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 131 (7) , 1707-1711
- https://doi.org/10.1149/1.2115943
Abstract
The principal topographic imperfections in Si films recrystallized on by the graphite‐strip‐heater technique have been examined. Wafer warpage has been reduced to less than 4 μm for 2 in. diam samples. The protrusion density decreases with finer sub‐boundary spacing; this correlation can be understood in terms of the thermal gradient present at the liquid‐solid interface.Keywords
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