Monitoring low dose single implanted layers with four-point probe technology
- 1 January 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 21 (1-4) , 526-528
- https://doi.org/10.1016/0168-583x(87)90897-4
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Using Six-Point Probe Meter Models 101 And 101CPublished by SPIE-Intl Soc Optical Eng ,1985
- Energy and spatial distribution of an electron trapping center in the MOS insulatorJournal of Applied Physics, 1977
- Hole traps in silicon dioxideJournal of Applied Physics, 1976
- Formation of Ultrathin Oxide Films on SiliconJournal of the Electrochemical Society, 1972