Digital chemical vapor deposition of SiO2
- 10 September 1990
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 57 (11) , 1096-1098
- https://doi.org/10.1063/1.104284
Abstract
The repetitive cycles of a few monolayers hydrogenated silicon deposition and its oxidation has been employed for the growth of SiO2. The surface reaction is promoted by an alternate irradiation of silicon hydride radical beam produced by the upstream pulsed microwave discharge of SiH4 and discharged oxygen beam. The deposition rate is controlled by the flow velocity of silane gas jet and substrate temperature. It is shown that the deposition species ejected with supersonic velocity into a high vacuum reactor conformably fills the SiO2 film into a deep Si trench.Keywords
This publication has 3 references indexed in Scilit:
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- Low Temperature Silicon Nitride Deposition Using Microwave-Excited Active NitrogenJapanese Journal of Applied Physics, 1978
- Infrared and Raman spectra of the silicon-hydrogen bonds in amorphous silicon prepared by glow discharge and sputteringPhysical Review B, 1977