Thermal dependence of the refractive index of GaAs and AlAs measured using semiconductor multilayer optical cavities

16 January 1995

journal article
Published by AIP Publishing in Applied Physics Letters

Vol. 66 (3) , 335-337
https://doi.org/10.1063/1.114204

Abstract

The longitudinal optical mode shift with temperature was measured in two vertical cavity surface‐emitting laser (VCSEL) type optical resonators with different GaAs and AlAs layer structures. The measurements show distinct differences in the behavior of the cavities. From the data the thermal dependencies of the indices of refraction of GaAs and AlAs for wavelengths near 1 μm were determined to be (2.67±0.07)×10⁻⁴/°C and (1.43±0.07)×10⁻⁴/°C, respectively.

Keywords

GALLIUM ARSENIDES
ALUMINIUM ARSENIDES
SEMICONDUCTOR LASERS
LASER CAVITIES
REFRACTIVE INDEX
TEMPERATURE DEPENDENCE
HETEROSTRUCTURES
MULTILAYERS
SPECTRAL SHIFT

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