Oxide thickness effect and surface roughening in the desorption of the oxide from GaAs
- 22 July 1991
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 59 (4) , 464-466
- https://doi.org/10.1063/1.105437
Abstract
The temperature for thermal desorption of the gallium oxide from GaAs is shown to increase linearly with oxide thickness. In addition, we show by diffuse light scattering that highly polished GaAs substrates roughen during the oxide desorption. These results are interpreted in terms of a model in which the oxide evaporates inhomogeneously.Keywords
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