Microwave performance of SOI n-MOSFETs and coplanar waveguides
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (1) , 26-27
- https://doi.org/10.1109/55.75687
Abstract
The microwave performance of 1- mu m gate-length n-MOSFETs fabricated on both SIMOX and BESOI substrates was measured. The process included a self-aligned silicide in an otherwise conventional MOS sequence. Initial optimization yielded devices with an f/sub max/ of 14 GHz on BESOI and 11 GHz on SIMOX. Coplanar waveguides (CPWs) were fabricated on substrates with resistivities from 4 to 4000 Omega -cm. A loss of 1.8 dB/cm at 2 GHz was demonstrated on the 4000- Omega -cm float-zone substrate.Keywords
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