Monolayer Be δ-doped heterostructure bipolar transistor fabricated using doping selective base contact
- 19 July 1990
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 26 (15) , 1187-1188
- https://doi.org/10.1049/el:19900768
Abstract
A heterostructure bipolar transistor (HBT) with a base δ-doping of 6×1014cm−2, near the physical limit of one monolayer (ML) is reported. The devices exhibits a current gain of 15. The doping confinement of the δ layer is 15 Å. To fabricate the HBT without inducing dopant diffusion or using sensitive etching, a new low-temperature basecontacting procedure (Tmax = 420°C) which requires no base-emitter etching has been development. This has the additional benefits of greatly reducing surface recombination and yielding a planar structure.This publication has 1 reference indexed in Scilit:
- Heterostructure bipolar transistors and integrated circuitsProceedings of the IEEE, 1982