Time-Resolved X-Ray Absorption Spectroscopy for Laser-Ablated Silicon Particles in Xenon Gas
- 1 June 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (6A) , L735
- https://doi.org/10.1143/jjap.35.l735
Abstract
We developed a laboratory-scale in situ apparatus for soft X-ray absorption spectroscopy with a time resolution of 10 ns and a space resolution of 100 µm. Utilizing this spectrometer, we have investigated the dynamics of silicon atoms formed by laser ablation in xenon gas. It was found that 4d-electrons in the xenon atoms are excited through collision with electrons in the laser-generated silicon plasma.Keywords
This publication has 6 references indexed in Scilit:
- Time-and-Space Resolved X-Ray Absorption Spectroscopy of Laser-Ablated Si ParticlesJapanese Journal of Applied Physics, 1994
- Synthesis and processing of silicon nanocrystallites using a pulsed laser ablation supersonic expansion methodApplied Physics Letters, 1994
- Measurements of Ionization Cross Sections of 4d-Electrons in Xenon by Electron ImpactJournal of the Physics Society Japan, 1993
- Laser-plasma soft x-ray absorption spectroscopy of laser-ablated Si and C particlesAIP Conference Proceedings, 1993
- C60: BuckminsterfullereneNature, 1985
- Photofragmentation of Mass-ResolvedClustersPhysical Review Letters, 1985