Field ionised impurity scattering in an AlGaAs/GaAs two-dimensional electron gas
- 4 August 1983
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 19 (16) , 619-620
- https://doi.org/10.1049/el:19830422
Abstract
Low field-mobility saturation has been observed in AlGaAs/GaAs heterostructures. Under illumination, the mobility decreases and the carrier concentration increases at high fields. Both effects are thought to be due to ionisation of a centre in the GaAs, probably oxygen. The experimental results are explained in terms of a simple trap model.Keywords
This publication has 1 reference indexed in Scilit:
- MBE-Grown GaAs/N-AlGaAs Heterostructures and Their Application to High Electron Mobility TransistorsPublished by Japan Society of Applied Physics ,1981