Abstract
The time and temperature dependence of the thermoelectric properties of phosphorus-doped Si-Ge alloys has been investigated over the temperature range 600-1400K. Changes in the Seebeck coefficient, electrical resistivity and carrier concentration which result from the precipitation of phosphorus from solid solution at temperatures below 1100K are reported. The precipitation process is found to be reversible and the precipitated phosphorus can be put back into solid solution in a very short time by annealing at temperatures above 1200K. The Lifshitz-Slyozov model has been used to determine the equilibrium carrier concentration of phosphorus in the temperature range 600-1400K.

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