ZnCdSe/ZnSSe/ZnMgSSe SCH Laser Diode with a GaAs Buffer Layer
- 1 July 1994
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 33 (7A) , L938
- https://doi.org/10.1143/jjap.33.l938
Abstract
Blue-green laser diodes exhibiting continuous-wave operation during hundreds-of-seconds have been fabricated. This structure is a ZnCdSe/ZnSSe/ZnMgSSe separate-confinement heterostructure with low dislocation density of ∼105 cm-2 in the n-ZnMgSSe cladding layer. The use of a GaAs buffer layer has lead to the decrease of dislocation density for laser-diodes, with which we have observed CW operation up to 80° C, that showed the feasibility of ZnCdSe/ZnSSe/ZnMgSSe SCH laser-diodes.Keywords
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