Interaction between Dislocations and Non-Radiative Recombination Centers in GaAs
- 1 March 1987
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 26 (3A) , L179-182
- https://doi.org/10.1143/jjap.26.l179
Abstract
Interaction of non-radiative recombination centers with dislocations in a LEC-grown GaAs crystal is investigated by observing the change in cathodoluminescence image caused by various heat-treatments. Impurities related to non-radiative recombination centers are gettered by dislocations most effectively at a temperature of around 750°C. The cause of the gettering is concluded to be due to the reaction incorporating the impurities that takes place at the dislocation core.Keywords
This publication has 4 references indexed in Scilit:
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