Resonant Magnetotunneling via One-Dimensional Quantum Confined States
- 22 August 1994
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 73 (8) , 1146-1149
- https://doi.org/10.1103/physrevlett.73.1146
Abstract
Submicron resonant tunneling diodes fabricated by a novel processing technique exhibit two series of peaks in their current-voltage characteristics. The peaks are strongly dependent on both the magnitude and direction of a magnetic field oriented perpendicular to the tunnel current. This dependence is used to unambiguously identify resonant tunneling between one-dimensional quantum wire states.Keywords
This publication has 20 references indexed in Scilit:
- Probing the wave function of quantum confined states by resonant magnetotunnelingPhysical Review B, 1993
- Tunneling studies of energy levels and selection rules in low-dimensional structuresPhysical Review B, 1993
- Effect of Si δ doping and growth temperature on the I(V) characteristics of molecular-beam epitaxially grown GaAs/(AlGa)As resonant tunneling devicesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1993
- Quantum confinement in laterally squeezed resonant tunneling devicesPhysical Review Letters, 1992
- Direct experimental determination of the tunnelling time and transmission probability of electrons through a resonant tunnelling structureJournal of Physics: Condensed Matter, 1990
- Resonant tunneling through one- and zero-dimensional states constricted by As/GaAs/As heterojunctions and high-resistance regions induced by focused Ga ion-beam implanationPhysical Review B, 1990
- Resonant tunneling in zero-dimensional nanostructuresPhysical Review B, 1989
- Magnetic field studies of negative differential conductivity in double barrier resonant tunnelling structures based on n-InP/(InGa)AsSolid-State Electronics, 1988
- Resonant tunneling in magnetic field: Evidence for space-charge buildupPhysical Review B, 1987
- Effect of Silicon Doping Profile on I–V Characteristics of an AlGaAs/GaAs Resonant Tunneling Barrier Structure Grown by MBEJapanese Journal of Applied Physics, 1986