Evaluation of the Surface Concentration of Diffused Layers in Silicon
- 1 May 1958
- journal article
- website
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Bell System Technical Journal
- Vol. 37 (3) , 699-710
- https://doi.org/10.1002/j.1538-7305.1958.tb03882.x
Abstract
A method for determining the surface concentration of diffused impurity layers in semiconductors is described. It is shown that the surface concentration may be evaluated if the sheet resistivity of the layer, junction depth, impurity distribution ac...Keywords
This publication has 2 references indexed in Scilit:
- Diffusion of Donor and Acceptor Elements in SiliconJournal of Applied Physics, 1956
- Resistivity Measurements on Germanium for TransistorsProceedings of the IRE, 1954