Reverse-bias current-electric field characteristics of amorphous silicon films with blocking layers: Thickness dependence

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Abstract
Static current-electric field (J-F) characteristics of p-type hydrogenated amorphous Si (a-Si:H)/intrinsic (i) a-Si:H/amorphous Si1−xCx structures under reverse-biased conditions have been studied. These structures are widely used for xerographic photoreceptors. The main variable was the thickness of the i layer (di), ranging from 2.5 to 27 μm. The J-F characteristics exhibited three distinct regions, i.e., an Ohmic region, a differential negative resistance (DNR) region, and a superlinear region with increasing F. The DNR occurred approximately at the same F (∼104 V/cm), and the J values in the other two regions proved systematically but differently dependent on the i-layer thickness. The J value at a low F value in the Ohmic region decreased rapidly below the di value of 10 μm, while for di above 10 μm the J value was constant. In the superlinear region, J for a constant F increased proportionally to di. The origins of these thickness dependences are discussed.