Advances in linearised GaAs MESFET circuit design techniques
- 2 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 4, 2037-2040 vol.4
- https://doi.org/10.1109/iscas.1992.230375
Abstract
Discusses the synthesis of linearized conductance functions using GaAs MESFETs which have an approximately square-law drain current versus gate-source voltage characteristic. The functions for realization are derived and implemented in three basic circuit configurations: transconductance, self-conductance, and buffer function. The new circuits outperformed previous circuits in terms of chip area, power consumption, and efficiency. The alternative concept of voltage linearization is introduced. It was used to realize lossless buffer circuits. Optimization of FET gate widths to allow a verified realistic FET model was demonstrated.<>Keywords
This publication has 4 references indexed in Scilit:
- AC-coupled linearised GaAs MMIC circuitsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Synthesis of transconductor/multiplier circuits for gallium arsenide technologyIEEE Transactions on Circuits and Systems I: Regular Papers, 1992
- GaAs device modelling for design and applicationPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1991
- High frequency gallium arsenide linearised transconductor for communicationsElectronics Letters, 1990