Surface damage of GaAs from 0.694- and 1.06-μ laser radiation

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Abstract
A study of GaAs surface damage due to ruby and Nd‐glass laser radiation is presented. The laser wavelengths chosen represent photon energies both above and below the band gap. Garich material develops on the surface to a greater extent with conventional mode operation than with the Q‐switched mode. Although the nature of the surface preparation was seen to influence the damage threshold for the case of Q‐switched pulsing, no correlation was found to exist between the threshold and the absence, presence, or type of doping. The damage threshold for Nd‐glass laser radiation was approximately 107 W/cm2, only a little higher than that for ruby laser radiation. For Nd‐glass laser radiation, the damage appears to be connected with material flaws which are especially susceptible to damage due to their proximity to the surface.

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