Optimum MOS power matching by exploiting non-quasistaticeffect
- 15 April 1999
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 35 (8) , 672-673
- https://doi.org/10.1049/el:19990432
Abstract
Low-noise and power amplifiers commonly use inductive degeneration to match the inherently capacitive MOS device to the source impedance RS. It is shown how this matching technique can be refined by incorporating the non-quasistatic effect and further improved so as to strongly increase the gain. It is shown that the maximum gain is achieved by matching the source impedance RS to the intrinsic gate resistance embodying the non-quasistatic effect.Keywords
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