Linear and Non-Linear Piezoresistance Coefficients in Cubic Semiconductors. I. Theoretical Formulations

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Abstract
This paper constitutes the first part of a work devoted to applications of piezoresistance effects in germanium and silicon semiconductors. In this part, emphasis is placed on a formal explanation of non-linear effects. We propose a brief phenomenological description based on the multi-valleys model of semiconductors before to adopt a macroscopic tensorial model from which general analytical expressions for primed non-linear piezoresistance coefficients are derived. Graphical representations of linear and non-linear piezoresistance coefficients allows us to characterize the influence of the two angles of cut and of directions of alignment. The second part will primarily deal with specific applications for piezoresistive sensors

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