Sensitive GaAlAs/GaAs wide-gap emitter phototransistor for high current applications

1 December 1980

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 1 (12) , 247-249
https://doi.org/10.1109/edl.1980.25308

Abstract

GaAlAs/GaAs bipolar phototransistors involving a wide gap emitter have been fabricated which exhibit high current gain with corresponding external quantum efficiencies of the order of 5000. The devices provide a power switching capability of more than 1 W.

Keywords

GALLIUM ARSENIDE
PHOTOTRANSISTORS
HETEROJUNCTIONS
DOPING
VOLTAGE
BIPOLAR TRANSISTORS
ETCHING
OPTICAL SENSORS
CONTACTS
LIGHTING