Theoretical influence of surface states and bulk traps on thin film transistor characteristics
- 31 August 1975
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 18 (7-8) , 691-698
- https://doi.org/10.1016/0038-1101(75)90141-0
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Role of incompletely ionized donors as bulk traps in thin film transistorsThin Solid Films, 1974
- Effective mobility and bulk trapping in heavily doped CdSeSolid-State Electronics, 1973
- Effects of diffusion current on characteristics of metal-oxide (insulator)-semiconductor transistorsSolid-State Electronics, 1966
- Space Charge Calculations for SemiconductorsJournal of Applied Physics, 1958