Main Peak Profiles of Total Reflection X-Ray Fluorescence Analysis of Si(001) Wafers Excited by Monochromatic X-Ray Beam W-Lβ (I)
- 1 September 1992
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 31 (9R)
- https://doi.org/10.1143/jjap.31.2872
Abstract
It is shown that the main peak profiles of monochromatic Total reflection X-ray fluorescence analysis (TXRF) depend very much on the misorientation of the crystallographic [001] axis or the vicinal surface of Si(001) wafer from the crystallographic direction, when TXRF is used for trace analysis of Si wafers. This phenomenon is closely related to the diffraction phenomenon of evanescent beam penetration into a Si wafer under the condition of total external reflection.Keywords
This publication has 2 references indexed in Scilit:
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- Grazing incidence X-ray fluorescence analysisNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1986