Highly efficient diode-pumped 3-/spl mu/m Er/sup 3+/:BaY/sub 2/F/sub 8/ laser
- 1 February 1997
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Selected Topics in Quantum Electronics
- Vol. 3 (1) , 90-94
- https://doi.org/10.1109/2944.585819
Abstract
A systematic investigation on a series of monoclinic Er3+:BaY2F8 crystals with different dopant concentrations (CEr = 5%–30%) and crystal orientations was conducted to optimize the laser performance in this new 3-μm laser medium by laser diode pumping. The highest slope efficiency of 32% near the quantum defect (35%) was obtained with a 10% doped Er3+:BaY2F8 crystal with the orientation (010) and a length of 3.5 mm. A maximum output power of 160 mW was achieved at an absorbed pump power of 550 mW at a wavelength of 970 nm.Keywords
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