Lattice Location and Ionisation Induced Annealing of Self-Interstitials in Boron-Implanted Silicon by Rutherford Backscattering
- 16 December 1975
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 32 (2) , K151-K154
- https://doi.org/10.1002/pssa.2210320261
Abstract
No abstract availableThis publication has 5 references indexed in Scilit:
- EPR evidence of the self-interstitials in neutron-irradiated siliconSolid State Communications, 1974
- Use of the channeling technique and calculated angular distributions to locate Br implanted into Fe single crystalsPhysical Review B, 1974
- Ionization enhanced diffusionThe Journal of Chemical Physics, 1973
- Analysis of disorder distributions in boron implanted siliconRadiation Effects, 1970
- PRODUCTION AND ANNEALING OF LATTICE DISORDER IN SILICON BY 200-keV BORON IONSApplied Physics Letters, 1969