Characterization of Epitaxially Grown CVD-Pb(Zr, Ti) O3 Films with High Deposition Rate
Open Access
- 1 January 1994
- journal article
- Published by Ceramic Society of Japan in Journal of the Ceramic Society of Japan
- Vol. 102 (1182) , 114-118
- https://doi.org/10.2109/jcersj.102.114
Abstract
Pb(ZrxTi1-x)O3 films with good surface flatness were deposited by CVD using the gas mixture of Pb(DPM)2-Zr(O⋅t-Bu)4-Ti(O⋅i-Pr)4-O2. The epitaxially grown Pb(ZrxTi1-x)O3 films were deposited on (100)MgO substrates with 300nm/min of the deposition rate. This deposition rate is the highest among the reported value. The existence of the grains with slight different angle along the film thickness was ascertained by TEM observation. It was attributed to the volume change at the Curie temperature and to the large temperature dependence of a- and c-axes lattice parameters of Pb(ZrxTi1-x)O3 film compared with that of MgO substrate below the Curie temperature. The refractive index of this film was in good agreement with that reported for Pb(ZrxTi1-x)O3 crystal without post heat-treatment and its dispersion can be fitted the Sellmeier dispersion formula.Keywords
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